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자료 필터
자료유형
발행연도
2016 ~ 2026
2016 2026
키워드
언어
전체 74건 중 1번부터 10번까지의 결과를 표시합니다.
2026
Article
Demonstration of ferroelectric GaN transistors with area-ratio-controlled AlScN-based MFMIS gate stack
- Park, Jongmin ;
- Joo, Hyeong Jun ;
- Yoo, Geonwook
- 2026-08
- Applied Physics Letters
- AIP Publishing
Article
Effect of AlScN Polarization Suppression in the Access-Region for Ferroelectric GaN HEMTs
- Joo, Hyeong Jun ;
- Lee, Gyuhyung ;
- Lim, Yoojin ;
- Hanrahan, Brendan ;
- Yoo, Geonwook
- 2026-07
- IEEE Transactions on Electron Devices
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article
Effects of Dielectric Interlayer on Polarization Switching and Rectifying Characteristics in Al0.8Sc0.2N/HfO2 Ferroelectric Diodes
- Park, Jong Min ;
- Joo, Hyeong Jun ;
- Lim, Yoojin ;
- Bae, Juno ;
- Hanrahan, Brendan ;
- ... Yoo, Geonwook
- 2026-06
- Micromachines
- MDPI
Article
Geometric and Area Scaling Effects on Ferroelectric Properties of Al0.8Sc0.2N-Based Capacitive Memory
- Lim, Yoojin ;
- Joo, Hyeong Jun ;
- Yoon, Sisung ;
- Yoo, Geonwook
- 2026-04
- IEEE Journal of the Electron Devices Society
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article
Ferroelectric AlScN Field-Plated Vertical β-Ga2O3 SBD With Improved On-Resistance and Breakdown Voltage
- Yoon, Sisung ;
- Kim, Hyojung ;
- Lim, Yoojin ;
- Oh, Seungyoon ;
- Park, Jongmin ;
- ... Yoo, Geonwook
- 2026-03
- IEEE Transactions on Electron Devices
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article
Fast photo-carrier multiplication by engineered potential trap in MoS2/Ge double junction phototransistor
- Park, Youngseo ;
- Jung, Minhyeok ;
- Jeong, Han Beom ;
- Jeong, Hu Young ;
- Sim, Sangwan ;
- ... Yoo, Geonwook ;
- 외 1명
- 2026-01
- Scientific Reports
- NATURE PORTFOLIO
2025
Article
Rapid Thermal Annealing for Reduced Leakage and Enhanced Endurance of Reactive-Sputtered AlScN-Based Ferroelectric Memory Capacitors
- Bae, Juno ;
- Lim, Yoojin ;
- Park, Jong Min ;
- Joo, Hyeong Jun ;
- Yoo, Geonwook
- 2025-11
- ELECTRONICS
- MDPI
Article
Enhanced Reliability of Ferroelectric GaN HEMTs With Reduced Depolarization-Field Effect
- Joo, Hyeong Jun ;
- Lee, Gyuhyung ;
- Lim, Yoojin ;
- Hanrahan, Brendan ;
- Yoo, Geonwook
- 2025-10
- IEEE Electron Device Letters
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article
Monolithic Integrated, Reconfigurable Gallium Oxide NAND/NOR Gates With Ferroelectric AlScN Gate Stack
- Yoon, Sisung ;
- Oh, Seungyoon ;
- Lim, Yoojin ;
- Park, Ji-Hyeon ;
- Jeon, Dae-Woo ;
- ... Yoo, Geonwook
- 2025-09
- IEEE Electron Device Letters
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article
Suppressed Negative DIBL of Ferroelectric HEMT With Gate-Align Patterned AlScN Stack
- Lee, Gyuhyung ;
- Joo, Hyeong Jun ;
- Oh, Seung Yoon ;
- Yoo, Geonwook
- 2025-07
- IEEE Electron Device Letters
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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