Ferroelectric AlScN Field-Plated Vertical β-Ga2O3 SBD With Improved On-Resistance and Breakdown Voltage

초록

We report a vertical beta -Ga2O3 Schottky barrier diode (SBD) enhanced with a ferroelectric aluminum scandium nitride (AlScN) field plate (FP). The FP SBD exhibits a reduced on-resistance ( R-on) of 2.88-5.08 m Omega & sdot; cm(2) and a breakdown voltage (BV) of 635-865 V, which is approximately 3.5 & times; higher than BV of the reference SBD ( R-on : 3.16-6.15 m Omega & sdot;cm(2); BV: 210-243 V). Additionally, we showed that performance can be further improved by FP SBD that incorporates a 4-nm HfO2 interlayer (IL) FP SBD, achieving R-on of 3.07-5.59 m Omega & sdot; cm(2) and a BV of 1115-1155 V. Electrical performance is assessed up to 550 K, while structural analysis confirms the first direct deposition of reactive sputtered ferroelectric AlScN on the beta -Ga2O3 epilayer. TCAD simulations verify the polarization field effect in these gains and also validate the electric field dispersion effect with increasing AlScN thickness. Consequently, the FP SBD delivered a significant improvement ( > 10 & times;) , and the ILFP SBD delivered an improvement of ( > 20 & times;) in Baliga's figure of merits (BFOMs), highlighting its potential to advance Ga2O3-based power devices ' performance.

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