유건욱 프로필 사진

유건욱

Yoo, Geon wook

자료 필터

자료유형

발행연도

2016 ~ 2026
2016 2026

키워드

언어

전체 76건 중 41번부터 50번까지의 결과를 표시합니다.

2021
Article

Fluorine-based plasma treatment for hetero-epitaxial beta-Ga2O3 MOSFETs

  • Jeong, Yeong Je ; 
  • Yang, Jeong Yong ; 
  • Lee, Chan Ho ; 
  • Park, Ryubin ; 
  • Lee, Gyeongryul ; 
  • ... Yoo, Geonwook ; 
  • 외 1명
  • 2021-08
  • Applied Surface Science
  • ELSEVIER
Article

Polycrystalline/Amorphous HfO2Bilayer Structure as a Gate Dielectric for β-Ga2O3MOS Capacitors

  • Yang, J.Y. ; 
  • Ma, J. ; 
  • Lee, C.H. ; 
  • Yoo, G.
  • 2021-03
  • IEEE Transactions on Electron Devices
  • Institute of Electrical and Electronics Engineers Inc.
Article

Pt-Decorated Graphene Gate AlGaN/GaN MIS-HEMT for Ultrahigh Sensitive Hydrogen Gas Detection

  • Ahn, J. ; 
  • Kim, D. ; 
  • Park, K. ; 
  • Yoo, G. ; 
  • Heo, J.
  • 2021-03
  • IEEE Transactions on Electron Devices
  • Institute of Electrical and Electronics Engineers Inc.
Article

Ultrahigh Deep-Ultraviolet Responsivity of a β-Ga2O3/MgO Heterostructure-Based Phototransistor

  • Ahn, J. ; 
  • Ma, J. ; 
  • Lee, D. ; 
  • Lin, Q. ; 
  • Park, Y. ; 
  • ... Yoo, G. ; 
  • 외 4명
  • 2021-02-17
  • ACS Photonics
  • American Chemical Society
Article

Graded Crystalline HfO2 Gate Dielectric Layer for High-k/Ge MOS Gate Stack

  • Lee, C.H. ; 
  • Yang, J.Y. ; 
  • Heo, J. ; 
  • Yoo, G.
  • 2021-02
  • IEEE Journal of the Electron Devices Society
  • Institute of Electrical and Electronics Engineers Inc.
Article

A comparative study of charge trapping effect in p-type MoTe2 and WSe2 FETs using pulsed current-voltage measurements

  • Yang, Jeong Yong ; 
  • Lee, Chan Ho ; 
  • Oh, Young Taek ; 
  • Ma, Jiyeon ; 
  • Heo, Junseok ; 
  • ... Yoo, Geonwook
  • 2021-01-01
  • Japanese Journal of Applied Physics
  • IOP PUBLISHING LTD
2020
Article

Active-matrix monolithic gas sensor array based on MoS2 thin-film transistors

  • Kim, Sehwan ; 
  • Park, Heekyeong ; 
  • Choo, Sooho ; 
  • Baek, Seongho ; 
  • Kwon, Yena ; 
  • ... Yoo, Geonwook ; 
  • 외 4명
  • 2020-11
  • COMMUNICATIONS MATERIALS
  • SPRINGERNATURE
Article

Impact of ALD HfO2 Gate-Oxide Geometries on the Electrical Properties and Single-Event Effects of beta-Ga2O3 MOSFETs: A Simulation Study

  • 2020-08
  • Journal of the Korean Physical Society
  • KOREAN PHYSICAL SOC