Graded Crystalline HfO2 Gate Dielectric Layer for High-k/Ge MOS Gate Stack

Lee, C.H.; Yang, J.Y.; Heo, J.; Yoo, G.

doi:10.1109/JEDS.2021.3058631

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Graded Crystalline HfO2 Gate Dielectric Layer for High-k/Ge MOS Gate Stack

Lee, C.H.;
Yang, J.Y.;
Heo, J.;
Yoo, G.

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초록

Germanium (Ge) has gained great attention not only for future nanoelectronics but for back-end of line (BEOL) compatible monolithic three-dimensional (M3D) integration recently. For high performance and low power devices, various high-k oxide/Ge gate stacks including ferroelectric oxides have been investigated. Here, we demonstrate atomic layer deposited (ALD) polycrystalline (p-) HfO2/GeOX/Ge stack with an amorphous (a-) HfO2 capping layer. The consecutively deposited a-HfO2 capping layer improves hysteretic behaviors (ΔV) and interface state density (Dit) of the p-HfO2/GeOX/Ge stack. Furthermore, leakage current density (J) is significantly reduced (x 100) by passivating leakage paths through grain boundaries of p-HfO2. The proposed HfO2 layer with the graded crystallinity suggests possible high-k/Ge stacks for further optimized Ge MOS structures. CCBY

키워드

ALD HfO2; Amorphous; Atomic layer deposition; Capacitance-voltage characteristics; Dielectrics; Ge; Germanium; Hafnium oxide; Hysteresis; Leakage.; Logic gates; Polycrystalline; Atomic layer deposition; Chromium compounds; Crystallinity; Gate dielectrics; Grain boundaries; Hafnium oxides; High-k dielectric; Hysteresis; Interface states; Logic gates; Atomic layer deposited; Back end of lines; Crystalline HfO2; Ferroelectric oxides; Hysteretic behavior; Interface state density; Low-power devices; Polycrystalline; Germanium compounds

제목: Graded Crystalline HfO2 Gate Dielectric Layer for High-k/Ge MOS Gate Stack

저자: Lee, C.H.; Yang, J.Y.; Heo, J.; Yoo, G.

DOI: 10.1109/JEDS.2021.3058631

발행일: 2021-02

유형: Article in Press

저널명: IEEE Journal of the Electron Devices Society

권: 9

페이지: 295 ~ 299