High-performance Atomic-Layer-Deposited SnO thin film transistors fabricated by intense pulsed light annealing

초록

In this study, SnO films were grown by atomic layer deposition using Sn(dmamp)(2) and H2O as the Sn-precursor and reactant, respectively, at a low temperature of 120 degrees C. Intense pulsed light (IPL) annealing was employed to obtain high-quality polycrystalline SnO films with excellent hole transport characteristics. The amorphous SnO film could be crystallized by IPL annealing, particularly at a light pulse number between 200 and 300, and the degree of crystallinity increased with increasing IPL treatment. The Sn2+ oxidation state of the SnO film was almost maintained after IPL annealing, with no apparent phase transformation from SnO to SnO2 or Sn. In addition, the IPL-annealed SnO films exhibited a smooth surface morphology with a root-mean-squared roughness of 0.22-0.50 nm. Finally, bottom-gated staggered-structured thin-film transistors (TFTs) were fabricated with 6-30 nm-thick IPL-annealed SnO channel layers. Excellent p-type SnO-based TFT performance was achieved with a field-effect hole mobility of 4.31 cm(2)/V.s and an on-to-off current ratio of 8.2 x 10(4).

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