Atomic layer deposition of Ru/rutile Al-TiO2/Ru layer stacks for high-performance silicon capacitors

초록

We investigate the fabrication of high-performance silicon capacitors using atomic layer deposition (ALD) by growing metal/insulator/metal thin film layer stacks on silicon substrates. The ALD characteristics of highquality Ru and TiO2 films are presented, as well as corresponding electronic data for the individual films. In an optimized capacitor structure, we concurrently observe a large capacitance of 29 nF/mm2, a low leakage current of 1 nA/cm2, and a high breakdown voltage of 4.8 V. This was achieved by optimizing the top electrode structure and implementing Al doping in the TiO2 insulator film. Our results highlight the potential of ALDgrown layer stack structures for high-performance silicon capacitors, which can be utilized in a wide range of applications that span power electronics to advanced memory devices.

키워드