Improved resistive switching characteristics of Au/TiO2/Au memristors on PDMS substrates with pyramid arrays

초록

Memristors hold significant importance for future data storage and neuromorphic computing devices. However, complementary metal oxide semiconductor-compatible memristors on Si substrates suffer from harsh nonuniform resistance switching behavior due to the random ion movement that results in defect formation. To improve the uniformity of conducting filament formation/destruction through uniform ion movements, a memristor device on a pyramid-structured polydimethylsiloxane (PDMS) substrate was fabricated to induce electric field concentration at the top of the structure. The pyramid-structured PDMS not only serves as an electric field concentrator but also has lower crack density, enhancing the adhesion of memristor devices to the substrate. While memristors fabricated on the flat PDMS substrate showed no resistance switching, the pyramid- structured device was confirmed to operate for more than 1,000 resistive switching cycles, with set and reset voltages of 3.15 V +/- 0.36 V and-1.44 V +/- 0.35 V, respectively, and an on/off ratio exceeding 106.

키워드