Synthesis of heteroleptic [Sr(ddemap)(tmhd)]2 and its use in atomic layer deposition of low carbon SrO thin films

초록

New strontium heteroleptic complexes were synthesized by the substitution reaction of the bis(trimethylsilyl)amide of Sr(btsa)2<middle dot>2DME with aminoalkoxide and beta-diketonate ligands (btsa = bis(trimethylsilyl)amide, DME = 1,2-dimethoxyethane). Three compounds, [Sr(ddemap)(tmhd)]2 (1), [Sr(ddemmp)(tmhd)] (2), and [Sr(ddemamb)(tmhd)]2 (3), were obtained as precursors for SrO growth (ddemap = 1-(dimethylamino)-5-((2-(dimethylamino)ethyl)(methyl)amino)pentan-3-ol, ddemmp = 1-(dimethylamino)-5-((2-(dimethylamino)ethyl)(methyl)amino)-3-methylpentan-3-ol, ddemamb = 1-(dimethylamino)-2-(((2-(dimethylamino)ethyl)(methyl)amino)methyl)butan-2-ol). In single crystal X-ray crystallography, complex 1 showed dimeric structure with mu 2-O bonds of ddemap ligand. Complexes 1 and 2 displayed high volatility and can be sublimed under reduced pressure (0.7 torr) at 150 degrees C. Accordingly, complex 1 was used as an atomic layer deposition (ALD) precursor for synthesis of SrO thin film at a high temperature of 370 degrees C. With O3 as the oxygen source, typical ALD growth behavior was obtained with controllable initial growth and uniformity. The as-deposited SrO film reacted with carbon in the air and formed SrCO3 with high crystallinity and poor surface morphology. However, the Al2O3 capping layer induced a smooth amorphous SrO film with little carbon or nitrogen impurities, which indicated the high purity of as-grown SrO film with no carbonate phase formation by the novel SrO ALD process.

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