Photoluminescence induced by thermal annealing in SrTiO3 thin film

Rho, JaeHoon; Jang, SeungHun; Ko, Young Dong; Kang, SeungJin; Kim, Dong-Wook; Chung, J. -S.; Kim, Miyoung; Han, Moonsup; Choi, Eunjip

doi:10.1063/1.3275707

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Photoluminescence induced by thermal annealing in SrTiO3 thin film

Rho, JaeHoon;
Jang, SeungHun;
Ko, Young Dong;
Kang, SeungJin;
Kim, Dong-Wook;
... Chung, J. -S.;
외 3명

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초록

We have grown SrTiO3 thin films by rf-sputtering and studied its photoluminescence (PL) property after postannealing treatments. While the as-grown film does not show any PL signal, visible frequency PL emissions are induced by high temperature (T>550 degrees C) annealing. When subsequent low-T (50 degrees C) and long term (>8 months) annealing was made, the PL-spectra evolved into another pattern in which four distinct luminescence peaks appear simultaneously at lambda=1.8, 2.2, 2.7, and 3.1 eV. We propose that these remarkable room temperature PL effects are due to both metastable and energetically stabilized defect states formed inside the band gap.

키워드

annealing; defect states; dielectric thin films; energy gap; high-temperature effects; permittivity; photoluminescence; sputter deposition; strontium compounds; ROOM-TEMPERATURE

제목: Photoluminescence induced by thermal annealing in SrTiO3 thin film

저자: Rho, JaeHoon; Jang, SeungHun; Ko, Young Dong; Kang, SeungJin; Kim, Dong-Wook; Chung, J. -S.; Kim, Miyoung; Han, Moonsup; Choi, Eunjip

DOI: 10.1063/1.3275707

발행일: 2009-12-14

유형: Article

저널명: Applied Physics Letters

권: 95

호: 24

출판사: AMER INST PHYSICS

발행국가: 미국

ISSN: E 1077-3118
P 0003-6951