Block copolymer multiple patterning integrated with conventional ArF lithography

초록

We present block copolymer multiple patterning as an efficient and truly scalable nanolithography for sub-20 nm scale patterning, synergistically integrated with conventional ArF lithography. The directed assembly of block copolymers on chemically patterned substrates prepared by ArF lithography generated linear vertical cylinder arrays with a 20 to 30 nm diameter, enhancing the pattern density of the underlying chemical patterns by a factor of two or three. This self-assembled resolution enhancement technique affords a straightforward route to highly ordered sub-20 nm scale features via conventional lithography.

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