Low Subthreshold Swing Double-Gate β-Ga2O3 Field-Effect Transistors with Polycrystalline Hafnium Oxide Dielectrics

Ma, J.; Yoo, G.

doi:10.1109/LED.2019.2924680

상세 보기

Low Subthreshold Swing Double-Gate β-Ga2O3 Field-Effect Transistors with Polycrystalline Hafnium Oxide Dielectrics

Ma, J.;
Yoo, G.

Citations

WEB OF SCIENCE

34

Citations

SCOPUS

36

초록

We demonstrate low subthreshold swing (SS) double-gate (DG) β-Ga2O3 field-effect transistors (FETs) with polycrystalline hafnium oxide (HfO2) gate dielectrics. The atomic layer deposited HfO2 layer at an elevated temperature of 350 °C without post-deposition annealing has a polycrystalline structure. The threshold voltage is modulated from depletion-to enhancement-mode by independently controlled bottom-gate bias. The SS is reduced to as low as 64 mV/dec with mobility of 20 cm2/Vs while maintaining a high ON/OFF ratio of 107 and negligible hysteresis of 30 mV via double-gate operation. The device shows an ON/OFF ratio of 106 and the SS of 320 mV/dec up to an operating temperature of 250 °C and the OFF-state breakdown voltage of 355 V. The demonstrated DG β-Ga2O3 FETs with the polycrystalline HfO2 layer is a promising structure for energy efficient high temperature device and circuit applications. © 1980-2012 IEEE.

키워드

double-gate; hafnium oxide; β-Ga2O3; Atomic layer deposition; Energy efficiency; Gallium compounds; Gate dielectrics; Hafnium oxides; High temperature applications; Oxides; Threshold voltage; Atomic layer deposited; Double gate; Field effect transistor (FETs); High temperature device; Off-state breakdown voltages; Polycrystalline structure; Post deposition annealing; Sub-threshold swing(ss); Field effect transistors

제목: Low Subthreshold Swing Double-Gate β-Ga2O3 Field-Effect Transistors with Polycrystalline Hafnium Oxide Dielectrics

저자: Ma, J.; Yoo, G.

DOI: 10.1109/LED.2019.2924680

발행일: 2019-08

유형: Article

저널명: IEEE Electron Device Letters

권: 40

호: 8

페이지: 1317 ~ 1320