Effect of Al 2 O 3 Passivation on Electrical Properties of beta -Ga 2 O 3 Field-Effect Transistor

Ma, J.; Lee, O.J.; Yoo, G.

doi:10.1109/JEDS.2019.2912186

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Effect of Al 2 O 3 Passivation on Electrical Properties of beta -Ga 2 O 3 Field-Effect Transistor

Ma, J.;
Lee, O.J.;
Yoo, G.

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WEB OF SCIENCE

26

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25

초록

We report on the effect of Al2O3 surface passivation on electrical properties of beta-gallium oxide (β-Ga2O3) nanomembrane field-effect transistor (FET). The fabricated bottom-gate β-Ga2O3(100) FET exhibits enhanced channel conductance and reduced hysteresis after the conformal atomic layer deposited Al2O3 passivation investigated by high-resolution transmission electron microscope (HR-TEM) analysis. Moreover, abnormal positive threshold voltage (VTH) shifts under negative bias stress are turned into negative VTH shifts, and off-state breakdown characteristics is improved as well. A modeling work using physics-based TCAD shows reduced surface depletion effect after the surface passivation. The results demonstrate that high quality ALD-Al2O3 surface passivation is an effective method to improve electrical properties of the bottom-gate β-Ga2O3 FET and its device applications.

키워드

passivation; surface depletion; Aluminum oxide; Electric breakdown; Field effect transistors; Passivation; Passivation; Stress; Surface depletion.; Alumina; Aluminum oxide; Atomic layer deposition; Electric breakdown; Electric field effects; Gallium compounds; Passivation; Stresses; Threshold voltage; Atomic layer deposited; Channel conductance; Device application; Gallium oxides; Off state breakdown characteristics; Physics-based; Surface depletion; Surface passivation; Field effect transistors

제목: Effect of Al 2 O 3 Passivation on Electrical Properties of beta -Ga 2 O 3 Field-Effect Transistor

저자: Ma, J.; Lee, O.J.; Yoo, G.

DOI: 10.1109/JEDS.2019.2912186

발행일: 2019-04

유형: Article

저널명: IEEE Journal of the Electron Devices Society

권: 7

페이지: 512 ~ 516