A driven growth model with quenched impurities on a sierpinski gasket substrate

초록

A discrete growth model with quenched impurities driven by an external force is studied on a Sierpinski gasket substrate. At the critical force F (c) , the growth velocity v of the average interface height follows a power-law behavior v(t) similar to t (-delta) , with delta a parts per thousand 0.268(1), and the interface width W shows a scaling behavior W (2)(t,L) similar to L (2 alpha) f(t/L (z) ), with alpha a parts per thousand 1.22(4) and z a parts per thousand 1.68(4). Near F (c) , the steady-state velocity scales as v (s) similar to(F - F (c) ) (theta) , with theta a parts per thousand 0.413(2). A possible fractional Langevin equation with quenched noise is introduced to describe the model.

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