Floating-Gate Coupling Canceller for Multi-Level Cell NAND Flash

초록

Floating-gate coupling occurs due to voltage changes in neighboring floating-gates. Coupling noise is difficult to overcome because of its non-linear property. We propose a coupling canceller for cancelling the coupling effect in multi-level cell NAND flash memory, and compare its performance with threshold detection. Simulation results show that the proposed floating-gate coupling canceller is an effective scheme for suppressing coupling noise.