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Transient analysis and simulation of a high power IGBT non-destructive tester
- Ahmed, A.;
- Coulbeck, L.;
- Castellazzi, A.;
- Johnson, C.M.
초록
The study proposes the primary design and transient analysis of an IGBT non-destructive tester. The tester is designed to test IGBTs at voltage and current ratings less than 3.3kV 2.4kA. Due to stray elements, the circuit might oscillate during the different modes of operation and test conditions. These oscillations could cause high stresses to the IGBT switches in the circuit and cause one or more of the switches to fail. A transient analysis is performed taking into account the different operating conditions. Hence the potential for destructive oscillations can be minimized via the proper design of the IGBT gate resistors. Simulation results of a failure case study using spice simulation software are then presented. © 2012 IEEE.
- 제목
- Transient analysis and simulation of a high power IGBT non-destructive tester
- 저자
- Ahmed, A.; Coulbeck, L.; Castellazzi, A.; Johnson, C.M.
- 발행일
- 2012
- 학회명
- 15th International Power Electronics and Motion Control Conference and Exposition, EPE-PEMC 2012 ECCE Europe
- 개최지
- Novi Sad
- 학회 개최일
- 2012-09-04 ~ 2012-09-06