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Design of low-dropout regulator using a-InGaZnO thin-film transistors
- Kim, Y.;
- Lee, H.
초록
In this paper, we presented a low-dropout (LDO) regulator composed with amorphous indium-gallium-zinc-oxide thin-film transistors (a-InGaZnO TFTs) for display driving systems. Through extensive simulation works, we confirmed that the proposed LDO regulator successfully could control the output voltage levels to follow the reference input voltages, and the output voltage ripple could be suppressed below 48mV when input reference voltage was changed from 14V to 15V with 100mV fluctuation. © 2016 IEEE.
- 제목
- Design of low-dropout regulator using a-InGaZnO thin-film transistors
- 저자
- Kim, Y.; Lee, H.
- 발행일
- 2017-10
- 학회명
- 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016
- 개최국가
- 대한민국
- 학회 개최일
- 2016-10-25 ~ 2016-10-28
- 언어
- ENG