Electrical Stability of Power Efficient Half Corbino Hydrogenated Amorphous Silicon Thin-Film Transistors

초록

In this paper, we study the electrical properties and current-temperature stress (CTS) induced electrical instability of half Corbino and fork-shaped hydrogenated amorphous silicon (a-Si: H) thin-film transistors (TFTs) fabricated on the same substrate. The influence on overall electrical properties of the threshold voltage shift of half Corbino a-Si: H TFT is discussed in comparison to fork-shaped a-Si: H TFT. The results indicate that half Corbino a-Si: H TFT has improved ON-current levels and electrical stability in comparison to fork-shaped a-Si: H TFT with the similar structural dimension. (C) 2011 The Japan Society of Applied Physics

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