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Giant Flexoelectric Effect in Ferroelectric Epitaxial Thin Films
- Lee, D.;
- Yoon, A.;
- Jang, S. Y.;
- Yoon, J. -G.;
- Chung, J. -S.;
- 외 3명
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487초록
We report on nanoscale strain gradients in ferroelectric HoMnO3 epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane x-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves.
키워드
ELECTRIC-FIELD; CRYSTALS; STRAIN; PHASE
- 제목
- Giant Flexoelectric Effect in Ferroelectric Epitaxial Thin Films
- 저자
- Lee, D.; Yoon, A.; Jang, S. Y.; Yoon, J. -G.; Chung, J. -S.; Kim, M.; Scott, J. F.; Noh, T. W.
- 발행일
- 2011-07
- 유형
- Article
- 권
- 107
- 호
- 5
- 언어
- ENG
- 출판사
- AMER PHYSICAL SOC
- 발행국가
- 미국
- ISSN
- E 1079-7114
P 0031-9007