EUV 포토레지스트용 polynorbornene의 합성과 성능평가

초록

Performance requirements for extreme ultraviolet (EUV) resists using photons at ~13 nm may require the development of entirely new polymer platforms. Elements that are commonly used in photoresists at other wavelengths, such as oxygen and fluorine, are highly absorbing in this region making them problematic for EUV applications. We have devised new polymer platform for EUV lithography (EUVL). We have synthesized silicon-containing norbornene copolymers using ring-opening metathesis polymerization (ROMP). The norbornene monomers were prepared and copolymerized with a series of monomers having acid sensitive and polar groups, including nitrile, carboxylic acid, hydroxyl, and anhydride functions to achieve random copolymers with suitable properties for EUVL. From initial exposure studies using an EUV interferometer, we were able to produce patterns having a 150 nm pitch without additional optimization.

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