A Ka-Band SPDT CMOS Switch With CLC-Based Matching for 5G NR Beamforming Systems

Citations

WEB OF SCIENCE

0
Citations

SCOPUS

0

초록

This article presents a bandwidth enhancement technique for a single-pole double-throw (SPDT) CMOS switch targeting 5G new radio (NR) applications. The switch employs a capacitor-inductor-capacitor (CLC) network in both Tx and Rx modes to maintain impedance near 50 Omega, enabling proper matching while supporting 5G NR requirements. In the Tx mode, all transistors are turned on to reduce voltage stress from the high output power of the power amplifier (PA), thereby improving power-handling capability. The proposed design was fabricated in a 65-nm RFCMOS process and operates from 26 to 31 GHz. Measurement results show an insertion loss of less than 2.39 dB and isolation greater than 26.7 dB in the Tx mode and an insertion loss below 1.87 dB with isolation exceeding 34.1 dB in the Rx mode. Moreover, the design achieved a high Rx isolation of 34.1 dB and an input P-1dB of 32.9 dBm in the Tx mode, underscoring its suitability for 5G NR front-end modules.

키워드

Switching circuitsInsertion loss5G mobile communicationTransistorsBandwidthLoss measurementImpedanceArray signal processingWireless communicationPower amplifiersinsertion lossisolationswitchDESIGN
제목
A Ka-Band SPDT CMOS Switch With CLC-Based Matching for 5G NR Beamforming Systems
저자
Kwon, JaehyunLee, JaeyongPark, Changkun
DOI
10.1109/LMWT.2025.3600310
발행일
2025-12
유형
Article
저널명
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS
35
12
페이지
2037 ~ 2040