X-ray scattering study on the electric field-induced interfacial magnetic anisotropy modulation at CoFeB / MgO interfaces

  • Song, K.M.; 
  • Kim, D.-O.; 
  • Kim, J.-S.; 
  • Lee, D.R.; 
  • Choi, J.W.
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초록

The electric field-induced modifications of magnetic anisotropy in CoFeB/MgO systems are studied using X-ray resonant magnetic scattering and magneto-optical Kerr effect. Voltage dependent changes of the magnetic anisotropy of −12.7 fJ/Vm and −8.32 fJ/Vm are observed for Ta/CoFeB/MgO and Hf/CoFeB/MgO systems, respectively. This implies that the interfacial perpendicular magnetic anisotropy is reduced (enhanced) when electron density is increased (decreased). X-ray resonant magnetic scattering measurements reveal that the small in-plane magnetic component of the remanent state of CoFeB/MgO systems with weak magnetic anisotropy changes depending on the applied voltage leading to modification of the magnetic anisotropy at the CoFeB/MgO interface. © 2018 Korean Physical Society

키워드

Spintronics; Magnetic anisotropy; X-ray scattering; Electric field control of magnetism; ATOMIC LAYERS
제목
X-ray scattering study on the electric field-induced interfacial magnetic anisotropy modulation at CoFeB / MgO interfaces
저자
Song, K.M.; Kim, D.-O.; Kim, J.-S.; Lee, D.R.; Choi, J.W.
DOI
10.1016/j.cap.2018.05.003
발행일
2018-05
유형
Article
저널명
Current Applied Physics
권
18
호
11
페이지
1212 ~ 1217