Hybrid Metal-Halide Perovskite-MoS2 Phototransistor

초록

Two-dimensional (2D) molybdenum disulfide (MoS2) has attracted much attention as a promising next-generation optoelectronic device. In particular, multilayer MoS2 has superior optical properties compared to mono-or few-layer MoS2 because of its higher density of states and wider spectral response. However, as the number of layers increases, multilayer MoS2 becomes indirect, resulting in poor light absorption and low photoresponsivity. Here, we report the enhanced photocurrent response of a multilayer MoS2 thin-film transistor by stacking an organometal halide perovskite (CH3NH3PbI3) layer on top of the multilyaer MoS2. With the perovskite overlayer, the photocurrent increased by two orders of magnitude, and thus our proposed hybrid phototransistor exhibited significantly enhanced photoresponsivity of similar to 1.1 A/W as well as detectivity of similar to 9 x 10(10) Jones compared to the MoS2 phototransistor without the perovskite layer. We also observe that the electrical properties change because of the effect of the overlayer. Our result indicates that multilayer MoS2 with a CH3NH3PbI3 overlayer can be a promising structure for high-performance MoS2-based photodetector applications.

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