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Wide-Range Threshold Voltage Tunable β-Ga2O3FETs With a Sputtered AlScN Ferroelectric Gate Dielectric
- Oh, Seung Yoon;
- Kim, Seokgi;
- Lee, Gyuhyung;
- Park, Ji-Hyeon;
- Jeon, Daewoo;
- ... Yoo, Geonwook;
- 외 1명
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13초록
In this study, we demonstrate a beta-Ga2O3 ferroelectric field-effect transistor (Fe-FET) using a sputtered aluminum scandium nitride (AlScN) gate dielectric. The device exhibits a steep subthreshold swing as low as 56 mV/dec with a high on/off ratio of similar to 10(8) and on-resistances of 201 and 185 Omega.mm for the polarization states. Furthermore, wide threshold voltage modulation from -23.4 to 3.5 V is achieved via gate pulses. Finally, retention and endurance tests show stable depletion (D-) and enhancement (E-) mode switching for up to 10,000 cycles. These results suggest the potential of the proposed beta-Ga2O3 Fe-FET with AlScN gate structure for monolithic integration of beta-Ga2O3 NMOS logic circuits.
키워드
Logic gates; Threshold voltage; Capacitors; Modulation; Nickel; Semiconductor device measurement; Dielectrics; Gallium oxide; aluminum scandium nitride; ferroelectric; threshold voltage modulation; FIELD-EFFECT TRANSISTORS
- 제목
- Wide-Range Threshold Voltage Tunable β-Ga2O3FETs With a Sputtered AlScN Ferroelectric Gate Dielectric
- 저자
- Oh, Seung Yoon; Kim, Seokgi; Lee, Gyuhyung; Park, Ji-Hyeon; Jeon, Daewoo; Kim, Sungkyu; Yoo, Geonwook
- 발행일
- 2024-09
- 유형
- Article
- 권
- 45
- 호
- 9
- 페이지
- 1558 ~ 1561