A Novel Design of Dual-Band Inverse Class-F Shunt-Diode Rectifier for Energy Harvesting

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초록

This brief presents a compact and high-efficiency dual-band (DB) rectifier with a novel implementation of a DB inverse class-F (class-F-1) harmonic termination incorporated with a DB fundamental matching network for energy harvesting (EH). Specifically, the harmonics of two design frequencies are manipulated properly in the class-F-1 standard by only five transmission lines (TLINs) with low sensitivity for more precise harmonic termination performance. The DB fundamental matching network is a TLIN-implemented p-type structure which can transform concurrently two arbitrary complex impedances to the 50 Omega standard source. Both two networks are theoretically analyzed and closed-form equations are derived. A prototype using a Schottky diode SMS7621-079LF is fabricated and measured at 2.4 GHz and 3.5 GHz showing that the highest power conversion efficiency (PCE) is achieved at 64.5% for 2.32 GHz and 64.2% for 3.48 GHz with an input power of 5 dBm and load resistor of 680 Omega while having a compact dimension of 40mm x 23mm, which indicates advantages of compactness and high PCE, as compared to the existing designs.

키워드

DB operation; energy harvesting; inverse class-F harmonic termination; shunt-diode rectifiers; CLASS-C; EFFICIENCY; RECTENNA
제목
A Novel Design of Dual-Band Inverse Class-F Shunt-Diode Rectifier for Energy Harvesting
저자
Bui, Gia Thang; Nguyen, Dang-An; Seo, Chulhun
DOI
10.1109/TCSII.2023.3240501
발행일
2023-07
유형
Article
저널명
IEEE Transactions on Circuits and Systems II: Express Briefs
권
70
호
7
페이지
2345 ~ 2349