Pulsed E-/D-Mode Switchable GaN HEMTs With a Ferroelectric AlScN Gate Dielectric

초록

In this study, we demonstrate ferroelectric GaN high-electron mobility transistors (HEMTs) with a sputtered AlScN gate dielectric, exhibiting a large memory window of similar to 14.6 V and a high on/off ratio of similar to 10(8). The strong polarization of AlScN layer contributes to the remarkably large threshold voltage (V-th) tuning range with counterclockwise hysteresis depending on voltage sweep ranges and pulsed parameters. Moreover, a recessed-gate structure enables the pulsed enhancement and depletion mode switching. The reconfigurable V-th via pulse modulation further allows feasibility of NOR logic gate with the single ferroelectric GaN HEMT.

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