Temperature-Dependent Ferroelectric Behaviors of AlScN-Based Ferroelectric Capacitors with a Thin HfO2 Interlayer for Improved Endurance and Leakage Current

초록

The ferroelectric switching behavior of a metal-ferroelectric AlScN-HfO2 interlayer-metal (MFIM) capacitor was investigated at variable temperatures and compared with an MFM capacitor. Although the MFIM capacitor demonstrated an inferior remnant polarization (2P(r) value of 74 mu C/cm(2)), it exhibited a reduced leakage current (x1/100) and higher breakdown field. The MFIM showed a stable change in 2P(r) from room temperature to 200 degrees C and an enhanced endurance of similar to 10(4) cycles at 200 degrees C; moreover, the leakage current was less degraded after the cycling tests. Thus, the ferroelectric AlScN with a thin HfO2 interlayer can enhance the reliability of ferroelectric switching.

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