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A Crash Recovery Scheme for a Hybrid Mapping FTL in NAND Flash Storage Devices
- Park, Jong-Hyeok;
- Park, Dong-Joo;
- Chung, Tae-Sun;
- Lee, Sang-Won
WEB OF SCIENCE
4SCOPUS
5초록
An FTL (flash translation layer), which most flash storage devices are equipped with, needs to guarantee the consistency of modified metadata from a sudden power failure. This crash recovery scheme significantly affects the writing performance of a flash storage device during its normal operation, as well as its reliability and recovery performance; therefore, it is desirable to make the crash recovery scheme efficient. Despite the practical importance of a crash recovery scheme in an FTL, few works exist that deal with the crash recovery issue in FTL in a comprehensive manner. This study proposed a novel crash recovery scheme called FastCheck for a hybrid mapping FTL called Fully Associative Sector Translation (FAST). FastCheck can efficiently secure the newly generated address-mapping information using periodic checkpoints, and at the same time, leverages the characteristics of an FAST FTL, where the log blocks in a log area are used in a round-robin way. Thus, it provides two major advantages over the existing FTL recovery schemes: one is having a low logging overhead during normal operations in the FTL and the other to have a fast recovery time in an environment where the log provisioning rate is relatively high, e.g., over 20%, and the flash memory capacity is very large, e.g., 32 GB or 64 GB.
키워드
- 제목
- A Crash Recovery Scheme for a Hybrid Mapping FTL in NAND Flash Storage Devices
- 저자
- Park, Jong-Hyeok; Park, Dong-Joo; Chung, Tae-Sun; Lee, Sang-Won
- 발행일
- 2021-02
- 유형
- Article
- 저널명
- ELECTRONICS
- 권
- 10
- 호
- 3
- 페이지
- 1 ~ 20