A 5.8-GHz Rectifier Using Diode-Connected MESFET for Space Solar Power Satellite System

초록

To improve the power handling capability at ground stations of a 5.8-GHz solar space power satellite using microwave power transmission, a power charge-pump meta-semiconductor field-effect transistor (MESFET)-based rectifier is presented in this article. Unlike conventional microwave Schottky diodes, diode-connected MESFETs, whose nonlinear characteristics help them to have a unique current-voltage (I-V) curve that overcomes the limitations of a Schottky diode. Thus, the maximum input power of the proposed rectifier is extended up to 251.2 mW by replacing a Schottky diode with a diode-connected MESFET. Additionally, a class F harmonic processing network is introduced to control the voltage and current waveform at the load of the rectifier. Consequently, the RF-dc conversion efficiency is increased since the power dissipation is limited at the junction resistance of both the drain and the source of the MESFET. Owing to the abnormal characteristics of the diode-connected MESFET, the measured conversion efficiency of our rectifier is approximately 73.2% at 126 mW, and the input power range for rectifier efficiency higher than 50% is between 16 and 224 mW. The proposed rectifier for the space solar power satellite application is demonstrated and verified using a microwave wireless power transmission system.

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