Localized electronic states induced by defects and possible origin of ferroelectricity in strontium titanate thin films

Kim, Y. S.; Kim, J.; Moon, S. J.; Choi, W. S.; Chang, Y. J.; Yoon, J. -G.; Yu, J.; Chung, J. -S.; Noh, T. W.

doi:10.1063/1.3139767

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Localized electronic states induced by defects and possible origin of ferroelectricity in strontium titanate thin films

Kim, Y. S.;
Kim, J.;
Moon, S. J.;
Choi, W. S.;
Chang, Y. J.;
... Chung, J. -S.;
외 3명

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WEB OF SCIENCE

40

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98

초록

Several defect configurations including oxygen vacancies have been investigated as possible origins of the reported room-temperature ferroelectricity of strontium titanate (STO) thin films [Y. S. Kim , Appl. Phys. Lett. 91, 042908 (2007)]. First-principles calculations revealed that the Sr-O-O vacancy complexes create deep localized states in the band gap of SrTiO(3) without affecting its insulating property. These results are consistent with electronic structural changes determined from optical transmission and x-ray absorption measurements. Our work suggests importance of oxygen vacancies and their complexes in understanding of electronic properties of perovskite oxide thin films, including STO.

키워드

ab initio calculations; defect states; energy gap; ferroelectric materials; ferroelectric thin films; light transmission; strontium compounds; vacancies (crystal); X-ray absorption spectra; SRTIO3

제목: Localized electronic states induced by defects and possible origin of ferroelectricity in strontium titanate thin films

저자: Kim, Y. S.; Kim, J.; Moon, S. J.; Choi, W. S.; Chang, Y. J.; Yoon, J. -G.; Yu, J.; Chung, J. -S.; Noh, T. W.

DOI: 10.1063/1.3139767

발행일: 2009-05-18

유형: Article

저널명: Applied Physics Letters

권: 94

호: 20

출판사: AMER INST PHYSICS

발행국가: 미국

ISSN: E 1077-3118
P 0003-6951