Controlled epitaxial growth modes of ZnO nanostructures using different substrate crystal planes

초록

A combined experimental and theoretical investigation has clarified the nanometre-scale vapour-phase epitaxial growth of ZnO nanostructures on different crystal planes of GaN substrates. Under typical growth conditions, ZnO nanorods grow perpendicular to the GaN(0001) plane, but thin flat films form on GaN(10 (1) over bar1), (10 (1) over bar0) and (1 (1) over bar 20). High-resolution X-ray diffraction data and transmission electron microscopy confirm the heteroepitaxial relationship between the ZnO nanostructures and GaN substrates. These results are consistent with first-principles theoretical calculations, indicating that the ZnO surface morphologies are mainly influenced by highly anisotropic GaN/ZnO interface energies. As a result of the large surface energy gradients, different ZnO nanostructures grow by preferential heteroepitaxial growth on different facets of regular GaN micropattern arrays. High-resolution transmission electron microscopy shows that ZnO nanotubes develop epitaxially on micropyramid tips, presumably as a result of enhanced nucleation and growth about the edges.

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