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An a-InGaZnO TFT Pixel Circuit Compensating Threshold Voltage and Mobility Variations in AMOLEDs
- Kim, Yongchan;
- Kanicki, Jerzy;
- Lee, Hojin
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32초록
In this paper, we proposed a novel voltage-programmed pixel circuit based on amorphous indium gallium zinc-oxide thin-film transistor (a-InGaZnO TFT) for active-matrix organic light-emitting display (AMOLED) with an enhanced electrical stability and uniformity. Through an extensive simulation work based on a-InGaZnO TFT and OLED experimental data, we confirm that the proposed pixel circuit can compensate for both mobility variation and threshold voltage shift of the driving TFT.
키워드
Active-matrix organic light-emitting display (AMOLED); amorphous indium gallium zinc oxide (a-InGaZnO); mobility variation; pixel circuit; thin-film transistor (TFT)
- 제목
- An a-InGaZnO TFT Pixel Circuit Compensating Threshold Voltage and Mobility Variations in AMOLEDs
- 저자
- Kim, Yongchan; Kanicki, Jerzy; Lee, Hojin
- 발행일
- 2014-05
- 유형
- Article
- 권
- 10
- 호
- 5
- 페이지
- 402 ~ 406
- 출판사
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행국가
- 미국
- 분량
- 5 페이지
- ISSN
- E 1558-9323
P 1551-319X