An a-InGaZnO TFT Pixel Circuit Compensating Threshold Voltage and Mobility Variations in AMOLEDs

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초록

In this paper, we proposed a novel voltage-programmed pixel circuit based on amorphous indium gallium zinc-oxide thin-film transistor (a-InGaZnO TFT) for active-matrix organic light-emitting display (AMOLED) with an enhanced electrical stability and uniformity. Through an extensive simulation work based on a-InGaZnO TFT and OLED experimental data, we confirm that the proposed pixel circuit can compensate for both mobility variation and threshold voltage shift of the driving TFT.

키워드

Active-matrix organic light-emitting display (AMOLED); amorphous indium gallium zinc oxide (a-InGaZnO); mobility variation; pixel circuit; thin-film transistor (TFT)
제목
An a-InGaZnO TFT Pixel Circuit Compensating Threshold Voltage and Mobility Variations in AMOLEDs
저자
Kim, Yongchan; Kanicki, Jerzy; Lee, Hojin
DOI
10.1109/JDT.2014.2304615
발행일
2014-05
유형
Article
저널명
IEEE/OSA Journal of Display Technology
권
10
호
5
페이지
402 ~ 406