A-IGZO TFT based operational amplifier and comparator circuits for the adaptive DC-DC converter

  • Kim, K.; 
  • Choi, K.-Y.; 
  • Choi, D.-H.; 
  • Lee, H.
Citations

SCOPUS

17

초록

In this paper, we present an operational amplifier (op-amp) based on amorphous Indium-Gallium-Zinc-Oxide thin-film transistors (a-InGaZnO TFTs) to achieve a comparator operated by pulse-width-modulation (PWM) control-loop structure, which can be used for dc-dc converter circuits integrated in the display driving system. Based on electrical characteristics of the fabricated a-InGaZnO TFT, we proposed a novel NMOS op-amp to achieve the overall gain of 19.2dB. On the basis of the proposed op-amp, we fabricated a-InGaZnO TFT comparator circuit, which could successfully operate at 100 Hz to control the duty ratio from 25% to 75% with the slew rate of 0.625V/μs. © 2014 Society for Information Display.

키워드

a-InGaZnO; dc-dc converter; operational amplifier (op-amp); oxide transistor; pulse-width-modulation (PWM), comparator; thin-film transistor (TFT)
제목
A-IGZO TFT based operational amplifier and comparator circuits for the adaptive DC-DC converter
저자
Kim, K.; Choi, K.-Y.; Choi, D.-H.; Lee, H.
DOI
10.1002/j.2168-0159.2014.tb00303.x
발행일
2014
유형
Article
저널명
Digest of Technical Papers - SID International Symposium
권
45
호
1
페이지
1164 ~ 1167