Polarity-dependent kinetics of ferroelectric switching in epitaxial BiFeO3(111) capacitors

  • Kim, T. H.; 
  • Baek, S. H.; 
  • Yang, S. M.; 
  • Kim, Y. S.; 
  • Jeon, B. C.; 
  • ... Chung, J. -S.; 
  • 외 4명
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초록

We report on the intriguing polarity-dependent kinetics of polarization switching in epitaxial BiFeO3(111) capacitors. Two seemingly incompatible switching kinetics were observed depending on the polarity of the applied switching bias. Under a negative switching bias, the polarization switching process occurs mainly through sideways domain wall motion, but under a positive switching bias, domain nucleation governs the polarization reversal. The modified piezoresponse force microscopy reveals these polarity-dependent ferroelectric domain evolutions. This polarity dependence of ferroelectric switching kinetics is attributed to defect-related local fields that have different distributions near film/electrode interfaces, probably due to structural relaxation in the BiFeO3(111) film. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3609235]

키워드

THIN-FILMS
제목
Polarity-dependent kinetics of ferroelectric switching in epitaxial BiFeO3(111) capacitors
저자
Kim, T. H.; Baek, S. H.; Yang, S. M.; Kim, Y. S.; Jeon, B. C.; Lee, D.; Chung, J. -S.; Eom, C. B.; Yoon, J. -G.; Noh, T. W.
DOI
10.1063/1.3609235
발행일
2011-07-04
유형
Article
저널명
Applied Physics Letters
권
99
호
1