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Polarity-dependent kinetics of ferroelectric switching in epitaxial BiFeO3(111) capacitors
- Kim, T. H.;
- Baek, S. H.;
- Yang, S. M.;
- Kim, Y. S.;
- Jeon, B. C.;
- ... Chung, J. -S.;
- 외 4명
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16SCOPUS
32초록
We report on the intriguing polarity-dependent kinetics of polarization switching in epitaxial BiFeO3(111) capacitors. Two seemingly incompatible switching kinetics were observed depending on the polarity of the applied switching bias. Under a negative switching bias, the polarization switching process occurs mainly through sideways domain wall motion, but under a positive switching bias, domain nucleation governs the polarization reversal. The modified piezoresponse force microscopy reveals these polarity-dependent ferroelectric domain evolutions. This polarity dependence of ferroelectric switching kinetics is attributed to defect-related local fields that have different distributions near film/electrode interfaces, probably due to structural relaxation in the BiFeO3(111) film. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3609235]
키워드
- 제목
- Polarity-dependent kinetics of ferroelectric switching in epitaxial BiFeO3(111) capacitors
- 저자
- Kim, T. H.; Baek, S. H.; Yang, S. M.; Kim, Y. S.; Jeon, B. C.; Lee, D.; Chung, J. -S.; Eom, C. B.; Yoon, J. -G.; Noh, T. W.
- 발행일
- 2011-07-04
- 유형
- Article
- 권
- 99
- 호
- 1
- 출판사
- AMER INST PHYSICS
- 발행국가
- 미국
- ISSN
- E 1077-3118
P 0003-6951