Deposition-Temperature-Mediated Selective Phase Transition Mechanism of VO2 Films

초록

A clear experimental explanation of the contribution of Mott and Peierls transitions to the insulator-metal transition (IMT) characteristics in vanadium dioxide (VO2) is still lacking. Examining the crystal and electronic structures of epitaxial VO2 films grown at various deposition temperatures, a Mott or a Peierls transition was observed. The VO2 film deposited at 500 degrees C showed suppressed Peierls transition characteristics because of the large in-plane compressive strain in the insulating phase. The VO2 films deposited at 600 and 650 degrees C had a higher IMT temperature because of the relaxation of both the in-plane and out-of-plane strain, and there were abundant V4+ states. Therefore, it was related to a collaborative Mott-Peierls transition. Finally, the VO2 film deposited at 720 degrees C showed a suppressed Mott transition because of the abundance of V-3(+) states in the insulating phase. Furthermore, an analysis of the electronic structure of the insulating and metallic phases using in situ X-ray photoelectron spectroscopy and X-ray absorption spectroscopy provide a complete band diagram to support the above explanation of the deposition-temperature-dependent IMT characteristics.

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