Selectively patterned highly conductive poly(3,4-ethylenedioxythiophene)-tosylate electrodes for high performance organic field-effect transistors

  • Lim, Jung Ah; 
  • Park, Song Hee; 
  • Baek, Ji Hye; 
  • Ko, Young Dong; 
  • Lee, Hwa Sung; 
  • ... Lee, Dong Ryeol; 
  • 외 3명
Citations

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Citations

SCOPUS

12

초록

We have improved the performance of pentacene field-effect transistors by using highly conductive poly(3,4-ethylenedioxythiophene)-tosylate (PEDOT-Tos) source-drain electrodes (similar to 10(3) S/cm) formed by a simple solution-based process. A high field-effect mobility of 0.25 cm(2)/Vs and an ON/OFF current ratio of 10(7) were obtained in pentacene-based bottom contact organic field-effect transistors (OFETs), which constitutes an improvement over OFETs based on Au and PEDOT:PSS electrodes. Two-dimensional grazing incidence x-ray diffraction and ultraviolet photoemission spectroscopy results confirmed that the crystalline properties of the pentacene film and the hole injection from the PEDOT-Tos electrode to the pentacene layer are more efficient than those from Au and PEDOT: PSS electrodes. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3273862]

키워드

THIN-FILM TRANSISTORS; ENERGY-LEVEL ALIGNMENT; POLYMER ELECTRODES; PENTACENE; INTERFACES; METAL; GROWTH
제목
Selectively patterned highly conductive poly(3,4-ethylenedioxythiophene)-tosylate electrodes for high performance organic field-effect transistors
저자
Lim, Jung Ah; Park, Song Hee; Baek, Ji Hye; Ko, Young Dong; Lee, Hwa Sung; Cho, Kilwon; Lee, Jun Young; Lee, Dong Ryeol; Cho, Jeong Ho
DOI
10.1063/1.3273862
발행일
2009-12-07
유형
Article
저널명
Applied Physics Letters
권
95
호
23