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Selectively patterned highly conductive poly(3,4-ethylenedioxythiophene)-tosylate electrodes for high performance organic field-effect transistors
- Lim, Jung Ah;
- Park, Song Hee;
- Baek, Ji Hye;
- Ko, Young Dong;
- Lee, Hwa Sung;
- ... Lee, Dong Ryeol;
- 외 3명
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12초록
We have improved the performance of pentacene field-effect transistors by using highly conductive poly(3,4-ethylenedioxythiophene)-tosylate (PEDOT-Tos) source-drain electrodes (similar to 10(3) S/cm) formed by a simple solution-based process. A high field-effect mobility of 0.25 cm(2)/Vs and an ON/OFF current ratio of 10(7) were obtained in pentacene-based bottom contact organic field-effect transistors (OFETs), which constitutes an improvement over OFETs based on Au and PEDOT:PSS electrodes. Two-dimensional grazing incidence x-ray diffraction and ultraviolet photoemission spectroscopy results confirmed that the crystalline properties of the pentacene film and the hole injection from the PEDOT-Tos electrode to the pentacene layer are more efficient than those from Au and PEDOT: PSS electrodes. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3273862]
키워드
- 제목
- Selectively patterned highly conductive poly(3,4-ethylenedioxythiophene)-tosylate electrodes for high performance organic field-effect transistors
- 저자
- Lim, Jung Ah; Park, Song Hee; Baek, Ji Hye; Ko, Young Dong; Lee, Hwa Sung; Cho, Kilwon; Lee, Jun Young; Lee, Dong Ryeol; Cho, Jeong Ho
- 발행일
- 2009-12-07
- 유형
- Article
- 권
- 95
- 호
- 23
- 출판사
- AMER INST PHYSICS
- 발행국가
- 미국
- ISSN
- E 1077-3118
P 0003-6951