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An efficient method for frequency-domain simulation of short channel MOSFET including the non-quasistatic effect
- Lee, K.-I.;
- Lee, C.;
- Shin, H.;
- Park, Y.J.;
- Min, H.S.
초록
In this paper, we propose an efficient method for the harmonic balance analysis of the short channel MOSFET including the non-quasistatic effect Our method is based on the charge-sheet model in the linear region and assumes that the saturation region is modulated by the external voltage instantaneously. By comparing with the current responses under large signal conditions obtained from the time-dependent two-dimensional simulator (MEDICI), it is confirmed that the proposed method is efficient and accurate for the frequency-domain analysis of the short channel MOSFET in the 0.1 μm regime. © 2003 IEEE.
- 제목
- An efficient method for frequency-domain simulation of short channel MOSFET including the non-quasistatic effect
- 저자
- Lee, K.-I.; Lee, C.; Shin, H.; Park, Y.J.; Min, H.S.
- 발행일
- 2003
- 학회명
- 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003
- 학회 개최일
- 2003-09-03 ~ 2003-09-05