Fabrication Methods for Microscale 3D Structures on Silicon Carbide

초록

Silicon carbide (SiC) is an attractive material for many industrial applications, such as semiconductors, electronic power devices, and optical and mechanical devices, owing to its wide bandgap, high thermal and wear resistance, and chemical inertness. Although SiC has superior properties, fabricating micro-features on SiC is very expensive and time-consuming. Many studies have introduced various fabrication methods utilizing physical, chemical, and thermal principles to remove SiC material. This paper reviews the state-of-the-art processes applicable for fabricating micro-3D structures on SiC, including etching, mechanical, thermal, and additive processes. The advantages and limitations of these processes are also discussed to guide the selection of processes suitable for SiC.

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