상세 보기
Discrete restricted curvature model with diffusion on a fractal substrate
- Kim, Dae Ho;
- Kim, Jin Min;
- Kang, Daeseung
Citations
WEB OF SCIENCE
3Citations
SCOPUS
3초록
A restricted curvature model with diffusion on a Sierpinski gasket substrate is studied. A surface particle is allowed to hop to the nearest neighbor site under the restricted curvature condition. The interface width W grows as t(beta) early on, with beta approximate to 0.221(8) and becomes saturated at L-alpha with alpha approximate to 1.54(2), where L is the system size. They satisfy a scaling relation 2 alpha + d(f) = 2z(rw) very well, where z(rw) and d(f) are the random walk exponent and the fractal dimension of the substrate, respectively. Also, a possible Langevin equation is introduced to describe the model.
키워드
fractal growth (theory); self-affine roughness (theory); thin film deposition (theory); GROWING INTERFACES; GROWTH
- 제목
- Discrete restricted curvature model with diffusion on a fractal substrate
- 저자
- Kim, Dae Ho; Kim, Jin Min; Kang, Daeseung
- 발행일
- 2014-07
- 유형
- Article
- 출판사
- IOP PUBLISHING LTD
- 발행국가
- 영국
- ISSN
- P 1742-5468