Luminescence characteristics of red light EmittingYVO(4): Eu thin-film phosphors deposited on si substrate using pulsed laser deposition

초록

Europium doped yttrium vanadate (YVO4:Eu) phosphor thin films were grown using a pulsed laser deposition (PLD) technique on silicon substrate. The structural characterization carried out on a series of YVO4:Eu films at post annealing temperature in the range of 550 degreesC-1150 degreesC indicating that films were preferentially (200) oriented at post annealing temperature above 950 degreesC. Photoluminescence of thin film increased with the increase of post annealing temperature and ambient oxygen pressure though the thin film has the powder-like surface morphology at oxygen pressure above 200 mTorr. Photoluminescence decay from D-5(1) level of Eu3+ show the great concentration dependency, which can be used as a good parameter to control the composition of YVO4:Eu thin film.

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